High-power EUV light sources (>500w) for high throughput in next-generation EUV lithography tools

EUV lithography systems are now fully deployed in the high-volume manufacturing of leading edge semiconductor devices. In this paper, we review the performance of ASML’s current generation light sources in the field and preview the next step in EUV source performance for the NXE:3800E system. The NXE:3800E system marks a substantial step forward in scanner productivity, delivering a remarkable increase of (+60 WPH) in throughput, made possible by an increase in EUV source power (to >500W). This significant increase in power was achieved through improvements in the droplet generator, higher power CO2 drive laser, improved collector design, and enhancements in our plasma controls required for higher plasma power. Details of these developments and their impact on system design and performance will be discussed, along with recent high-power performance demonstrations of the overall integrated EUV light source system.