Double-pulsed-induced medium-range order in Sn-doped Ga2O3 thin films: A strategy for enhanced record-breaking electrical properties

This study explores Sn-doped Ga2O3 thin films synthesized via the double-pulse metalorganic chemical vapor deposition (MOCVD) method, highlighting its unique advantages in improving film microstructure and electrical properties. The results show that the double-pulse Sn-doped technique, through intermittent atomic supply, promotes medium-range ordering of Sn atoms within the Ga2O3 lattice, reducing lattice defects and enhancing crystallinity. Secondary ion mass spectrometry further reveals a doping activation rate of 95%. Notably, the films exhibit exceptional electrical performance, achieving a Hall mobility of 175.61 cm2/V·s at a carrier concentration of 2.17 × 1018 cm−3. This value represents a record-high mobility for β-Ga2O3 at this carrier concentration, significantly surpassing the performance of films prepared via conventional continuous deposition methods. This study offers valuable insights into the mechanisms of double-pulse MOCVD and its potential for Ga2O3-based high-performance electronic devices, providing an effective pathway for optimizing next-generation electronic materials.