流量(数学)
材料科学
图层(电子)
单晶
冶金
复合材料
机械
结晶学
化学
物理
作者
Jiaming Kang,Yongjun Tan,Zhenling Huang,Tai Li,Xiang Zhou,Guoqiang Lv,Xingwei Yang,Wenhui Ma
标识
DOI:10.1107/s1600576725002699
摘要
The application of double-layer heaters in single-crystal furnaces holds great promise for single-crystal silicon rod production, but the absence of sufficient supporting research literature has hindered rapid progress in practical applications. In the current work, the relationship between the design of the double-layer heater and the flow behavior in the melt was obtained by investigating the lengths of the upper and lower layers of the double-layer heater and the gap position. The FEMAG single-crystal growth simulation platform (https://www.femagsoft.com) was adopted to simulate the growth model of M10 large-sized n -type single crystals. The mechanism of influence of the double-layer heater gap design on the melt flow behavior was obtained by taking the melt heating and heater radiation characteristics as the entry point and finally adopting the oxygen content in the crystal as a quality criterion. The results indicate that movement of the gap position can alter the heat-transfer conditions, thereby changing the intensity or volume of the three main vortices in the melt, which in turn affect the oxygen transport capacity.
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