High Resolution X-Ray Diffraction to Characterize Semiconductor Materials

X-ray diffraction g ives information on the c omposition and lattice strain of III-V and II-VI ternary and quaternary heteroepitaxial semiconductor layers used in the fabrication of optoeletronic devices. In this article we give a brief introduction to the materials used in technology of III-V optoeletronics, and how X-ray diffraction can provide vital i nformation to researchers involved in the growth and d evelopment of these semiconductors materials.