A 4.7.MU.A Quiescent Current, 450mA CMOS Low-Dropout Regulator with Fast Transient Response
作者
Sau Siong Chong,Hendra Kwantono,Pak Kwong CHAN
出处
期刊:IEICE Transactions on Electronics [Institute of Electronics, Information and Communication Engineers] 日期:2011-01-01卷期号:E94-C (8): 1271-1281被引量:3
标识
DOI:10.1587/transele.e94.c.1271
摘要
This paper presents a new low-dropout (LDO) regulator with low-quiescent, high-drive and fast-transient performance. This is based on a new composite power transistor composed of a shunt feedback class-AB embedded gain stage and the application of dynamic-biasing schemes to both the error amplifier as well as the composite power transistor. The proposed LDO regulator has been simulated and validated using BSIM3 models and GLOBALFOUNDRIES 0.18-µm CMOS process. The simulation results have shown that the LDO regulator consumes 4.7µA quiescent current at no load, regulating the output at 1V from a minimum 1.2V supply. It is able to deliver up to 450mA load current with a dropout of 200mV. It can be stabilized using a 4.7µF output capacitor with a 0.1Ω ESR resistor. The maximum transient output voltage is 64.6mV on the basis of a load step change of 450mA/10ns under typical condition. The full load transient response is less than 350ns.