MECHANICAL AND THERMOELECTRIC PROPERTIES OF HIGHER MANGANESE SILICIDE FILMS

Higher manganese silicide (HMS, MnSi 1.7 ) films have been deposited on glass, silicon and thermally oxidized silicon substrates by the methods of magnetron sputtering and thermal evaporation. Mechanical and thermo-electric properties of the films have been measured. The hardness and elastic modulus of the films are 10.0~14.5 GPa and 156~228 GPa, respectively. The sign of the Seebeck coefficient at room temperature is positive for all samples. The resistivity at room temperature is between 0.53×10 -3 and 45.6×10 -3 ohm-cm. The energy band gap calculated from the resistivity data for the film deposited on thermally oxidized silicon substrate is about 0.459 eV.