碳化硅
材料科学
可靠性(半导体)
工程物理
宽禁带半导体
钻石
航空航天
数码产品
功率半导体器件
结温
汽车工业
氮化镓
模具(集成电路)
碳化物
机械工程
功率(物理)
计算机科学
电气工程
光电子学
纳米技术
工程类
航空航天工程
复合材料
电压
物理
量子力学
图层(电子)
作者
Vemal Raja Manikam,Kuan Yew Cheong
出处
期刊:IEEE Transactions on Components, Packaging and Manufacturing Technology
[Institute of Electrical and Electronics Engineers]
日期:2011-04-01
卷期号:1 (4): 457-478
被引量:400
标识
DOI:10.1109/tcpmt.2010.2100432
摘要
The need for high power density and high temperature capabilities in today's electronic devices continues to grow. More robust devices with reliable and stable functioning capabilities are needed, for example in aerospace and automotive industries as well as sensor technology. These devices need to perform under extreme temperature conditions, and not show any deterioration in terms of switching speeds, junction temperatures, and power density, and so on. While the bulk of research is performed to source and manufacture these high temperature devices, the device interconnect technology remains under high focus for packaging. The die attach material has to withstand high temperatures generated during device functioning and also cope with external conditions which will directly determine how well the device performs in the field. This literature work seeks to review the numerous research attempts thus far for high temperature die attach materials on wide band gap materials of silicon carbide, gallium nitride and diamond, document their successes, concerns and application possibilities, all of which are essential for high temperature reliability.
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