自旋电子学
凝聚态物理
电流密度
反铁磁性
材料科学
隧道磁电阻
电场
扭矩
自旋(空气动力学)
自旋霍尔效应
磁场
电流
旋转扭矩传递
电流(流体)
隧道枢纽
光电子学
纳米技术
电气工程
图层(电子)
物理
铁磁性
自旋极化
磁化
工程类
电子
量子隧道
量子力学
热力学
作者
Brandon R. Zink,Delin Zhang,Hongshi Li,Onri J. Benally,Yang Lv,Deyuan Lyu,Jian Ping Wang
标识
DOI:10.1002/aelm.202200382
摘要
Abstract Spintronic devices, especially electric‐field and spin–orbit torque driven magnetic tunnel junctions (MTJs), are promising candidates to replace the current memory and logic components for satisfying future computing demands. Current spin–orbit torque based MTJ devices with a single free layer and spin Hall channel still face high current density for switching. Here, 150‐nm perpendicular MTJs are designed and fabricated with a synthetic‐antiferromagnetic free layer and a bilayered spin Hall channel. The switching behavior is investigated via combination of forces from electric‐field and spin–orbit torque, where the electric field can modulate the exchange coupling of the synthetic‐antiferromagnetic free layer. Through an assistance of spin–orbit torque, bidirectional switching is obtained with switching current density as low as 3 × 10 3 A cm −2 , which is two orders of magnitude lower than that of the current best reported values. These results suggest that electric‐field switching of synthetic‐antiferromagnetic MTJs could be a promising approach for reducing write current density of spintronic devices.
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