异质结
材料科学
费米气体
化学气相沉积
电子迁移率
光电子学
杂质
透射电子显微镜
宽禁带半导体
图层(电子)
散射
扫描电子显微镜
制作
电子
凝聚态物理
纳米技术
化学
光学
复合材料
病理
物理
有机化学
医学
量子力学
替代医学
作者
Jr-Tai Chen,Ingemar Persson,Daniel Nilsson,Chih-Wei Hsu,Justinas Pališaitis,Urban Forsberg,Per O. Å. Persson,Erik Janzén
摘要
A high mobility of 2250 cm2/V·s of a two-dimensional electron gas (2DEG) in a metalorganic chemical vapor deposition-grown AlGaN/GaN heterostructure was demonstrated. The mobility enhancement was a result of better electron confinement due to a sharp AlGaN/GaN interface, as confirmed by scanning transmission electron microscopy analysis, not owing to the formation of a traditional thin AlN exclusion layer. Moreover, we found that the electron mobility in the sharp-interface heterostructures can sustain above 2000 cm2/V·s for a wide range of 2DEG densities. Finally, it is promising that the sharp-interface AlGaN/GaN heterostructure would enable low contact resistance fabrication, less impurity-related scattering, and trapping than the AlGaN/AlN/GaN heterostructure, as the high-impurity-contained AlN is removed.
科研通智能强力驱动
Strongly Powered by AbleSci AI