材料科学
钬
吸收(声学)
兴奋剂
单晶
光学
波长
Crystal(编程语言)
双光子吸收
强度(物理)
分析化学(期刊)
衰减系数
光电子学
激光器
物理
化学
核磁共振
复合材料
程序设计语言
色谱法
计算机科学
出处
期刊:Physica Scripta
[IOP Publishing]
日期:2024-07-31
卷期号:99 (9): 095941-095941
标识
DOI:10.1088/1402-4896/ad69ce
摘要
Abstract Single crystals possessing nonlinear absorption (NA) character are favorable optical limiter in near infrared region (NIR). The NA features of pure and 0.005%, 0.05%, 0.1% Holmium (Ho) doped single crystals of InSe were analyzed at 1200 nm wavelength within 120 fs and 1 kHz repetition rate. The open-aperture Z-scan technique was employed to determine the NA performance and optical limiting-(OL) threshold. In an attempt to determine the NA coefficients, two types of theoretical models were used. The first model takes into account only the two photon absorption-(TPA), while the second model considers one photon absorption, TPA and free carrier absorption. Based on the experimental results, the main NA mechanism of the studied single crystals is determined as sequential TPA. TPA coefficient value of the pure InSe single crystal increased from 1.41 × 10 −10 to 10.7 × 10 −10 cm W −1 with increasing Ho doping concentration at 398.1 GW cm −2 input intensity. The NA coefficients increased from 0.84 × 10 −9 to 1.62 × 10 −9 cm W −1 at the same input intensity. On the other hand, the OL threshold values were found to be 0.027, 0.025, 0.022 and 0.020 J cm −2 at 1200 nm wavelength for pure InSe and the increasing Ho concentration, respectively. The robust NA characteristics and the low OL threshold establish the Ho-doped InSe single crystal as a favorable candidate for OL applications in the NIR spectral region.
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