异质结
光电子学
材料科学
钙钛矿(结构)
能量转换效率
兴奋剂
太阳能电池
导带
电容
接受者
钙钛矿太阳能电池
图层(电子)
化学
纳米技术
凝聚态物理
电极
物理
结晶学
电子
量子力学
物理化学
作者
Shiyao Gu,Ruiying Wang,Shi-e Yang,J.H. Gu,Xiaoxia Wang,Ping Liu,Yongsheng Chen
标识
DOI:10.1088/1361-6463/acf226
摘要
Abstract Recently, significant breakthroughs in power conversion efficiencies (PCEs) have been obtained for 3D CsPbI 3 -based perovskite solar cells. In the present work, a novel heterojunction structure with 1D Sb 2 S 3 as the hole transport layer was designed and investigated using solar cell capacitance simulator simulation software. The influence of thickness, band offset, conduction type, doping concentration, bulk and interface defect densities on the performances of the devices were analyzed. The PCE of the devices increases with the increase in the thicknesses of the CsPbI 3 and Sb 2 S 3 layers. The p -type conduction of the CsPbI 3 under-layer has more advantages with regard to broadening of the doping density, and the higher acceptor density in the Sb 2 S 3 over-layer contributes to the improvement of the performance of the device. In addition, the device performance is more sensitive to the defect density at the CsPbI 3 /Sb 2 S 3 interface than that in the Sb 2 S 3 over-layer. Finally, a PCE over 20% is obtained for the device with optimal parameters. These simulation results demonstrate the tremendous potential of a novel 3D/1D CsPbI 3 /Sb 2 S 3 heterojunction design for high-performance and high-stability devices.
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