High‐Quality CsAg2I3Microwires Grown by Spatial Confinement Method for Self‐Powered UV Photodetectors

材料科学 响应度 光电探测器 光电子学 异质结 光电效应 比探测率 电子迁移率 Crystal(编程语言) 结晶度 卤化物 单晶 复合材料 无机化学 化学 程序设计语言 计算机科学 结晶学
作者
Mengyao Zhang,Jingjing Yan,Jingli Ma,Xiaoxia Wang,Tianyu Li,Huifang Jiang,Xinzhen Ji,Meng Wang,Ruoting Yang,Zibin Liu,Xiaofeng Qi,Shanshan Cheng,Xu Chen,Zhifeng Shi
出处
期刊:Advanced Optical Materials [Wiley]
卷期号:11 (14) 被引量:14
标识
DOI:10.1002/adom.202203054
摘要

Abstract Recently, lead halide perovskites arouse intensive attentions in photoelectric fields owing to their low trap state density, high carrier mobility, large extinction coefficient, and low‐temperature solution processing technique. However, their future commercial development is severely hampered by the lead toxicity and instability. Although lead‐free metal‐halide perovskites recently have been extensively studied in optoelectronics, their low‐dimensional counterparts can further expand their novel optical and electronic properties for potential applications. In this work, the planar growth of one‐dimensional (1D) CsAg 2 I 3 single‐crystal microwires (MWs) on diverse substrates by space‐confined method is reported. The growth kinetic process of CsAg 2 I 3 single‐crystal MWs is elucidated by in situ observation. Furthermore, the CsAg 2 I 3 single‐crystal MWs exhibit potential applications in ultraviolet light photodetectors as a photoactive layer. The fabricated heterojunction photodetector exhibits pronounced photoelectric performances working in self‐powered mode, including a specific detectivity of 2.09 × 10 8 Jones, a high responsivity of 26.5 mA W −1 , and fast response speed of 258.43/289.32 ms under light illumination of 265 nm, due to the high crystallinity and effective photogenerated carrier transfer. This study provides a vital insight into the rational design of low‐dimensional perovskites for versatile optoelectronic applications.

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