Role of temperature on CdS and MoS2 doped SnO2 nanostructures: Potential applications in photodetection and temperature dependent current-voltage characteristics

The optical and electrical measurements in higher temperatures regime is a crucial issue. Although efforts are made to obtain optical and electrical characteristics at higher temperatures which have been achieved by optimizing various factors like (i) Type and dimensionality of the detecting materials (ii) operating wavelength and (iii) temperature regime. The present study investigates the role of temperature on the performance of an opto-electrical device derived from the nanostructure of a semiconductor oxide (SnO2) and chalcogenides (CdS and MoS2) along with their doped nanostructures. The proposed opto-electrical device is designed to make it simple, accurate, easy to operate, and cost-effective with enhanced performances at elevated temperature ranges from 30 ºC to 120 ºC. The optimized photodetection performance demonstrates its photoresponsivity of ∼6.3 mA W−1 for 390 nm wavelength. Other performance parameters such as detectivity of ∼8 × 108 jones at 405 nm wavelength and quantum efficiency ∼0.676 mA/Wm. The parameters obtained from synthesized material are superior to reported data. Improved photodetector performance is attributed due to the better structural, electronic, optical, and thermal behaviour of the nano dimension of chalcogenides (CdS, MoS2) and semiconductor oxide (SnO2). Apart from photodetection, electrical measurements were also carried out at varying temperature ranges from 30 to 120 ºC. The role of temperature was first evaluated using temperature dependent photoluminescence within the temperature regime (0–90 ºC). Although operating temperature above 90 ºC is a major issue for not allowing the device to operate above 120 ºC to avoid overheating the device and this limits it to show its best performance. The temperature dependent opto-electrical phenomenon was explained with the help of charge transfer across the interface between a silver electrode and nanostructures where dimensionality, operating temperature and nanostructures contribute significantly to the device performance. Hence, a trade-off is made with improved detection performance and operating temperature to qualify the expectations of the device to be competitive which has been justified through experimental results.