光电探测器
材料科学
光探测
光电子学
晶体管
光电二极管
信号(编程语言)
半导体
波长
阈值电压
可见光谱
灵敏度(控制系统)
电压
发光二极管
光敏性
响应时间
光电导性
场效应晶体管
光功率
光强度
暗电流
动态范围
功率半导体器件
比探测率
阈下传导
光刻胶
光学
作者
Lin He,Zhongsheng Ge,Andraž Mavrič,Nadiia Pastukhova,Junlong Zou,Paolo Samorı́,Zhiming M. Wang,Udayabhaskararao Thumu,Tim Leydecker
标识
DOI:10.1021/acsami.5c10837
摘要
Photodetectors are optoelectronic devices that output an electric signal when illuminated, with a wide range of uses in modern technologies from the fields of biomedical imaging to communications. However, further improving the sensitivity and functionality of these devices to achieve even broader applications would require further development of devices with selective detection capability over wide ranges of wavelengths. In this study, we present a novel photodetector capable of multiwavelength visible light detection using a blend of organic semiconductors and inorganic perovskites as active material. In this photofield-effect transistor (photoFET), the photogating effect of CsPbBr3 nanocrystals upon illumination below 520 nm triggers a large shift in threshold voltage while illumination over 600 nm results in an increase in current without threshold voltage shift. As a result, the device exhibits the capability to discriminate red and blue light, while being sensitive to the intensity of incident light within the visible spectrum. This innovative device opens the door to the development of single photodetector devices capable of recognizing multiple wavelengths and shows strong promise for increased photosensitivity due to the lack of power losses from filters. Furthermore, the combination of transistor operation and detection functions has strong promise for the development of reconfigurable and neuromorphic circuits.
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