锌黄锡矿
材料科学
铕
开路电压
镧系元素
光伏系统
载流子寿命
能量转换效率
光电子学
离子
太阳能电池
电压
捷克先令
发光
硅
电气工程
物理
量子力学
工程类
作者
Shuo Chen,Yunhai Zhao,Nafees Ahmad,Jun Zhao,Zhuanghao Zheng,Zhenghua Su,Xiaogang Peng,Xinjun Li,Xianghua Zhang,Ping Fan,Guangxing Liang,Shuo Chen
出处
期刊:Nano Energy
[Elsevier]
日期:2024-06-01
卷期号:124: 109448-109448
被引量:8
标识
DOI:10.1016/j.nanoen.2024.109448
摘要
Short carrier lifetimes is a key challenge limiting the open-circuit voltage (VOC) and power conversion efficiency (PCE) of kesterite Cu2ZnSn(S,Se)4 (CZTSSe) solar cells. In this work, for the first time, lanthanide europium (Eu) ions have been introduced into Ag-incorporated CZTSSe absorber layer, which can modify the selenization reaction pathway during the initial selenization process, leading to high-quality (Ag, Eu)-CZTSSe absorber with large compact crystal grains and benign surface potential fluctuations. This innovative absorber engineering can also optimize defects dynamics with less detrimental defects and defects-assisted non-radiative recombination. Thus, significantly enhanced minority carrier lifetimes from 0.97 to 3.15 ns can be achieved, representing one of the top values among various bulk and/or interface engineering treated CZTSSe. The champion CZTSSe thin-film solar cell exhibits an impressive VOC of 545.6 mV, accompanied with a stimulating increase in PCE from 10.68% to 13.30%. These findings underscore the potential of lanthanide cation doping to drive significant advancements in CZTSSe photovoltaic technology, and therefore promoting its further development and future applications.
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