Wafer-scale silicon microfabrication technology toward realization of low-cost sub-THz waveguide devices

Abstract This paper presents a wafer-scale silicon microfabrication technology for the sub-terahertz (sub-THz) waveguide device mass production. Based on the effective scheme, a WR-5 (140–220 GHz) straight rectangular waveguide and a WR-2.8 (260–400 GHz) rectangular waveguide bandpass filter are implemented as demonstrated examples. The silicon deep reactive ion etching (DRIE) process is employed to etch through the total thickness of the silicon wafer and form the main waveguide channels. Then, a low-temperature thermal compression process is used to bond the trough-etched wafer with the top and bottom metallised silicon wafers to form the closed waveguide structures without any precise alignment process. The fabricated waveguide has the benefit of low transmission loss (0.03–0.05 dB mm −1 ) at the whole G band. Besides, to measure the fabricated WR-2.8 waveguide filter and solve the measuring equipment standard waveguide difference, silicon micromachined waveguide transitions are explored and fabricated to match two different frequency-band modules for measuring the waveguide filters in the desired full frequency band, which also has a potential application for the different size waveguide conversion. The measured results agree well with the simulated ones. The measured 3 dB bandwidth is 9.3%, with a central frequency of 343 GHz; the average insertion loss (IL) is about 1.6 dB in the pass band, including two extra straight waveguides of 8 mm length on input/output ends and two external waveguide-to-waveguide transitions. The proposed method provides a feasible and cost-effective solution for the mass production of high-performance waveguide devices and integrated systems in sub-THz frequency bands and beyond.