碲化镉光电
材料科学
光电子学
太阳能电池
异质结
能量转换效率
开路电压
非阻塞I/O
图层(电子)
电容
氧化镍
短路
氧化物
电压
电极
纳米技术
化学
电气工程
冶金
催化作用
物理化学
工程类
生物化学
作者
José Carlos Zepeda Medina,E. Rosendo,Crisóforo Morales Ruíz,E. Camacho-Espinosa,Leticia Treviño Yarce,Reina Galeazzi Isasmendi,R. Romano-Trujillo,G. Garcı́a-Salgado,Antonio Coyopol Solís,Fabiola Gabriela Nieto Caballero,Ana Cristina Carranza Sanchez
出处
期刊:Heliyon
[Elsevier]
日期:2023-03-01
卷期号:9 (3): e14547-e14547
被引量:3
标识
DOI:10.1016/j.heliyon.2023.e14547
摘要
Simulation and analysis of solar cells based on the heterojunction of zinc oxide doped with aluminum (AZO) and cadmium telluride (CdTe) with the structure (Al/AZO/CdTe/NiO/Ni) using the Simulator of the capacitance of solar cells - 1 dimension (SCAPS-1D) has been presented in this paper. AZO is used as a window layer and Nickel oxide (NiO) has been introduced as a hole transport layer (HTL). Through the software, the effect of thickness, absorber (CdTe), and window (AZO) layers carrier concentration, operating temperature, and resistances (series and shunt) have been studied. Simulation results show that the solar cell performance can be greatly improved by adjusting the layer's thickness and carrier concentration, obtaining optimal values of 10 nm and 1018cm−3 for the AZO layer, while for the CdTe layer they were 2 μm and 1015cm−3. The optimum series and shunt resistances are in the range of 1–3 Ωcm2 and 1800–2200 Ωcm2 respectively. A maximum power conversion efficiency (PCE) of 14.2% is achieved with an open circuit voltage (Voc) of 0.74 V, short circuit current density (Jsc) of 26.15 mA/cm2 and a fill factor (FF) of 72.83%, this shows AZO potential to be considered as an interesting material to replace CdS window layer.
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