光电流
紫外线
材料科学
光电子学
化学气相沉积
暗电流
电极
纳米颗粒
蓝宝石
溅射沉积
探测器
光电导性
溅射
薄膜
光电探测器
纳米技术
光学
化学
物理化学
激光器
物理
作者
Wenqing Song,Xiaobiao Dai,Yingkun He,Tao Li
标识
DOI:10.1109/jeds.2022.3212395
摘要
Ultraviolet detectors can be used in ultraviolet disinfection, missile guidance and short-wave communication fields. Here we have grown GaN (002) film by chemical vapor deposition (CVD), through depositing 100 nm ZnO film as buffer layers on sapphire substrates by magnetron sputtering. Using Ni as the electrode, the metal-semiconductor-metal (MSM) ultraviolet (UV) detector was prepared. The device dark current, photocurrent and UV on/off current ratio were 5.19×10-9A, 2.52×10-7A and 54, under 2V bias. Then, using Au nanoparticles as plasmons, the photocurrent and photoresponsivity of the device were increased by 5.32 times and 5.25 times, respectively, and the UV on/off current ratio reached 176. The photoresponsivity of the device reaches the maximum value 0.42A/W at 370nm, the response time and relaxation time reach 0.1s and 0.12s, respectively.
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