磁矩
材料科学
反铁磁性
联轴节(管道)
图层(电子)
单层
凝聚态物理
感应耦合
密度泛函理论
结晶学
纳米技术
计算化学
化学
物理
冶金
量子力学
作者
Fengyuan Zhang,Junwei Tong,Yanzhao Wu,Guohui Liu,Rui Zhang,Fubo Tian,Gaowu Qin,Xianmin Zhang
出处
期刊:Physica Scripta
[IOP Publishing]
日期:2021-04-16
卷期号:96 (7): 075804-075804
被引量:2
标识
DOI:10.1088/1402-4896/abf86b
摘要
Abstract Interfacial magnetic coupling interactions between D 0 22 -Mn 3 Ga and ultrathin Fe films were studied using first principles calculations. Based on the calculations of surface energy and interface energy, it is demonstrated that Mn-Ga/Fe is the most stable interfacial structure. As a result, four possible coupling states between D 0 22 -Mn 3 Ga and Fe films may be present by considering the relative direction of magnetic moment for the interfacial and inner-layer Mn atoms. Their corresponding energies were calculated by varying the Fe atomic layer thicknesses from 1 to 6 monolayers. It is found that the antiferromagnetic coupling energy in D 0 22 -Mn 3 Ga/Fe films with an anti-parallel magnetic moment of the interfacial and inner-layer Mn atoms is the smallest one, regardless of the Fe layer numbers. The possible mechanism about the antiferromagnetic interactions between D 0 22 -Mn 3 Ga and ultrathin Fe films was analyzed by the orbital-resolved electronic density of states.
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