带隙
晶格常数
合金
密度泛函理论
材料科学
电子能带结构
电子结构
半导体
原子轨道
电介质
凝聚态物理
原子轨道的线性组合
体积模量
直接和间接带隙
Atom(片上系统)
电子
计算化学
化学
物理
光学
光电子学
量子力学
基准集
计算机科学
衍射
复合材料
嵌入式系统
作者
Ravindra Pandey,Michel Rérat,Mauro Causà
摘要
All electron density functional theory calculations were performed on the ordered Ge0.50Sn0.50 alloy in the zinc-blende phase to study its structural, electronic, and optical properties along with its stability with respect to the elemental components. We employed a linear combination of atomic orbitals approach for calculations in which the Bloch functions were constructed as linear combinations of atom-centered Gaussian orbitals. The calculated results show a relative stability of the GeSn alloy in the zinc-blende phase for which the lattice constant and bulk modulus are predicted to be 6.20 Å and 53 GPa, respectively. Analysis of band structure and density of states shows the cubic-ordered alloy to be a direct-gap semiconductor with a small band gap. The optical properties, such as dielectric constant and plasmon energy of the cubic alloy, appear to be about the average of the respective values in its elemental components.
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