晶体管
MOSFET
量子隧道
阈下摆动
场效应晶体管
电气工程
阈下传导
CMOS芯片
电压
数码产品
电流(流体)
工程物理
材料科学
光电子学
工程类
作者
Alan Seabaugh,Qin Zhang
出处
期刊:Proceedings of the IEEE
[Institute of Electrical and Electronics Engineers]
日期:2010-12-01
卷期号:98 (12): 2095-2110
被引量:1401
标识
DOI:10.1109/jproc.2010.2070470
摘要
Steep subthreshold swing transistors based on interband tunneling are examined toward extending the performance of electronics systems. In particular, this review introduces and summarizes progress in the development of the tunnel field-effect transistors (TFETs) including its origin, current experimental and theoretical performance relative to the metal–oxide–semiconductor field-effect transistor (MOSFET), basic current-transport theory, design tradeoffs, and fundamental challenges. The promise of the TFET is in its ability to provide higher drive current than the MOSFET as supply voltages approach 0.1 V.
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