碲
碲化镉光电
电阻率和电导率
电导率
微晶
杂质
化学
分析化学(期刊)
材料科学
无机化学
结晶学
光电子学
物理化学
环境化学
电气工程
有机化学
工程类
作者
Rashid Shamsuddin,Abu Nasar,V. B. Tare
摘要
The electrical conductivity of polycrystalline cadmium telluride having an impurity content of less than 200 ppm was measured in the temperature range of 675–975 K and in the ambient tellurium pressure varying from 1.0×10−15 atm to 2.0×10−5 atm. The electrical conductivity of polycrystalline CdTe doped with monovalent as well as trivalent cations has also been determined under similar conditions. The conductivity was found to change from predominantly p to predominantly n type at a critical tellurium pressure depending upon the temperature. The electrical conductivity increased with the increase in ambient tellurium pressures reached a maximum, and then decreased with further increase in tellurium pressure. The results have been used to discuss the probable defect structure of CdTe particularly with reference to the variation in ambient tellurium pressure.
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