材料科学
场效应晶体管
光电子学
领域(数学)
兴奋剂
晶体管
纳米技术
电气工程
电压
数学
工程类
纯数学
作者
Tang Xin-Yue,Gao Hong,Pan Si-Ming,Jianbo Sun,Yao Xiu-Wei,Xitian Zhang
出处
期刊:Chinese Physics
[Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences]
日期:2014-01-01
卷期号:63 (19): 197302-197302
被引量:1
标识
DOI:10.7498/aps.63.197302
摘要
Back-gate field effect transistors based on In-doped ZnO individual nanobelts have been fabricated using the low-cost microgrid template method. The output (Ids-Vds) and transfer (Ids-Vgs) characteristic curves for the transistors are measured, and the mobility is derived to be 622 cm2· V-1· s-1. This value is obviously superior to those for most of materials including pure ZnO in the literature, and possible influence factors have also been discussed.
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