德拉姆
极紫外光刻
多重图案
体积热力学
覆盖
节点(物理)
抵抗
平版印刷术
光学(聚焦)
控制逻辑
临界尺寸
可靠性工程
计算机科学
材料科学
嵌入式系统
计算机硬件
工程类
纳米技术
操作系统
光电子学
物理
光学
结构工程
量子力学
图层(电子)
作者
Eric Verhoeven,Ron Schuurhuis,Marcel Mastenbroek,Peter Jonkers,Frank Bornebroek,Arthur Minnaert,Harrie van Dijck,Parham Yaghoobi,Geert Fisser,Payam Tayebati,Martijn Leenders,Roderik van Es
摘要
In 2019 we have seen the first 7 nm logic devices, manufactured on ASML NXE:3400 scanners, hitting the market. In this paper we will give an update on the performance improvements to further optimize these systems for High Volume Manufacturing (HVM), related to the lithographic performance, productivity and uptime. We will also demonstrate that for the 5 nm logic node and 10nm-class DRAM, excellent overlay, focus, and critical dimension (CD) control have been realized. In combination with intrinsic tool stability and holistic control schemes, including (resist and tool) performance improvements addressing stochastics issues, this provides the required performance for HVM for these nodes. Finally we will discuss the ASML roadmap for meeting the requirements for the 3 nm node and beyond.
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