硅
光电子学
材料科学
异质结
薄膜太阳能电池
薄膜
太阳能电池
硅太阳电池
纳米技术
作者
Pradeep Balaji,William J. Dauksher,Stuart Bowden,André Augusto
标识
DOI:10.1109/pvsc40753.2019.8980698
摘要
Silicon heterojunction solar cells were manufactured on 40 µm thin substrates using standard industrial manufacturing processes. As the thickness of the substrates goes down, bulk Shockley-Read-Hall recombination is less dominant and surface recombination becomes the main loss mechanism at the maximum power point. In this paper we report our latest accomplishments on 40 µm thin silicon heterojunction solar cells. We have achieved implied open-circuit voltages >760 mV and surface saturation current densities 2 /ITO bilayer led to a gain of 1.2 ± 0.2 mA/cm2 in current density.
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