掺杂剂
纳米线
接受者
星团(航天器)
材料科学
兴奋剂
晶体管
硅
电子
谱线
光电子学
化学物理
化学
凝聚态物理
物理
量子力学
电压
天文
计算机科学
程序设计语言
作者
Chitra Pandy,Gaurang Prabhudesai,K. Yamaguchi,V. N. Ramakrishnan,Yoichiro Neo,Hidenori Mimura,Daniel Moraru
标识
DOI:10.35848/1882-0786/abf404
摘要
Abstract Electron transport through a few-donor cluster flanked by acceptors is studied by first-principles and semi-empirical simulations in gated Si-nanowire transistors with n + electrostatically-doped source/drain. Local density-of-states spectra are probed by electrical characteristics at room temperature for clarifying modifications induced by acceptor-atoms on the energy states of the few-donor cluster. It is found that acceptor-atoms located between the few-donor cluster and the leads mainly shift the cluster potential, introducing a minor distortion to its energy spectrum. The results change only weakly as the acceptor-atoms are moved towards the Si nanowire surface, and systematically depend on the number of acceptors.
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