Infrared spectroscopy of high k thin layer by multiple internal reflection and attenuated total reflection

A complete analysis of HfO2 high k thin layers deposited by metal organic chemical vapour deposition (MOCVD) is made by infrared spectroscopy using different optical configurations. Multiple internal reflection (MIR) and attenuated total reflection (ATR) are used, giving information about morphology and composition of the layers. Samples under investigation are HfO2 layer of 3 to 12 nm thick deposited at 400 and 550 °C on thin silicon oxide. MIR technique elucidates carbon content in the layer and ATR informs about the interface evolution, and the crystalline character of the HfO2 layer. The high sensitivity of MIR coupled with the large spectral range available of ATR allow the full characterisation of these layers. (© 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)