单片微波集成电路
集成电路
电子工程
放大器
物理设计
微波食品加热
电路设计
电子线路
集成电路设计
桥接(联网)
电力传输
计算机科学
工程类
电气工程
电信
CMOS芯片
计算机网络
作者
Simona Donati Guerrieri,Chiara Ramella,Eva Catoggio,Fabrizio Bonani
出处
期刊:Electronics
[Multidisciplinary Digital Publishing Institute]
日期:2022-09-08
卷期号:11 (18): 2832-2832
被引量:2
标识
DOI:10.3390/electronics11182832
摘要
Process Induced Variability (PIV) stemming from fabrication tolerance can impact the performance of integrated circuits. This issue is particularly significant at high frequencies, since Monolithic Microwave Integrated Circuits (MMICs) rely on advanced semiconductor technologies exploiting device sizes at the nanoscale in conjunction with complex passive structures, featuring both distributed elements (transmission lines) and lumped components. Black-box (behavioral) models extracted from accurate physical simulations can be profitably exploited to incorporate PIV into circuit-level MMIC analysis. In this paper, these models are applied to the statistical analysis of a single and of a combined MMIC power amplifier designed in GaAs technology for X-band applications. The relative impact of the active device variability towards the passive matching networks one is evaluated, demonstrating the relevance of PIV. The significant spread found, with only two variable parameters, confirms the importance of a PIV-aware PA design approach, with suitable margins and careful network optimization.
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