4H-SiC Crystal Growth Using Recycled SiC Powder Source
材料科学
复合材料
作者
Seung Jun Lee,Chae Young Lee,Jung‐Woo Choi,Jong Hwi Park,Jung Gyu Kim,Kap Ryeol Ku,Jun Hyuck Na,Won Jae Lee
出处
期刊:Solid State Phenomena日期:2024-08-27卷期号:362: 47-51
标识
DOI:10.4028/p-mc7lyf
摘要
A new method for reducing the cost and the fabrication time of source material required for SiC crystal growth has been proposed through a heat treatment of recycled powder bulk in this study. The actual crystal growth with using a conventional powder and a recycled powder bulk source has been performed under identical growth condition and then systematically compared in terms of the crystal quality. With applying the recycled powder bulk for SiC crystal growth, similar growth results were obtained as a result grown by conventional high-purity powder source. In terms of crystal defects, slight improvement was observed when high purity recycled powder bulk source was applied.