材料科学
蒸发
电子
电子束物理气相沉积
薄膜
阴极射线
化学工程
纳米技术
核物理学
热力学
物理
工程类
作者
Weitao Fan,Sai-Rui Li,Wei Ren,Yanhan Yang,Yixuan Li,Guang‐Hui Liu,Weili Wang
出处
期刊:Materials
[Multidisciplinary Digital Publishing Institute]
日期:2024-10-09
卷期号:17 (19): 4931-4931
摘要
Doping divalent metal cations into Ga2O3 films plays a key role in adjusting the conductive behavior of the film. N-type high-resistivity β-Ga2O3:Mg films were prepared using electron beam evaporation and subsequent postannealing processing. Various characterization methods (X-ray diffraction, X-ray photoelectron spectroscopy, photoluminescence, etc.) revealed that the Mg content plays an important role in affecting the film quality. Specifically, when the Mg content in the film is 3.6%, the S2 film’s resistivity, carrier content, and carrier mobility are 59655.5 Ω·cm, 1.95 × 1014 cm3/C, and 0.53682 cm2/Vs. Also, the film exhibits a smoother surface, more refined grains, and higher self-trapped exciton emission efficiency. The Mg cation mainly substitutes the Ga+ cation at a tetrahedral site, acting as a trap for self-trapped holes.
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