捷克先令
锌黄锡矿
材料科学
太阳能电池
光电子学
能量转换效率
硫化物
带隙
光伏系统
异质结
化学工程
冶金
生态学
生物
工程类
作者
Aoqi Xu,Xinyu Li,Hongkun Liu,Chunxu Xiang,Chengfeng Ma,Yize Li,Xiangyu Pan,Weibo Yan,Shaoying Wang,Wei Huang,Hao Xin
出处
期刊:Small
[Wiley]
日期:2024-10-21
被引量:2
标识
DOI:10.1002/smll.202407075
摘要
Abstract The environmentally friendly elements composed of high bandgap pure sulfide Cu 2 ZnSnS 4 (CZTS) semiconductor has broad prospects for building integrated photovoltaic, double‐sided, and semi‐transparent solar cells when fabricated on transparent substrates. The key issues limiting the performance of CZTS solar cells are poor absorber quality and unfavorable band energy alignment causing serious charge carrier recombination. Here, thefabrication of CZTS solar cells are reported on fluorine‐doped tin oxide (FTO) substrates from dimethyl sulfoxide solution and the effects of the Cd and Ag alloying on device performance. Characterizations show that Cd alloying greatly decreases defect concentration and converts Cliff‐type band alignment to favorable Spike‐type, leading to greatly improved current density. Further, Ag alloying eliminates near‐horizontal grain boundaries and passivates defects in both bulk and heterojunction interface, resulting in a champion device with a power conversion efficiency of 10.3%, the highest efficiency pure sulfide CZTS solar cell on FTO substrate. The results demonstrate the great application potential of pure sulfide kesterite solar cells.
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