Improving the Efficiency of CIGS Thin-Film Solar Cells via SCAPs-1D

The purpose of this study is to investigate the ways in which the efficiency of thin film solar cells is affected by differences in the thickness of the absorber layer (CIGS). The Copper indium gallium selenide (CIGS) layer has a thickness that varies from 0.05 to 0.5 µm, which results in differences in metrics such as the open circuit voltage (Voc), the short circuit current density (Jsc), the fill factor (FF), and the power conversion efficiency (PCE). As a result of the intensification of the absorption process, the data indicated a significant rise in both Voc and Jsc. The voltage (Voc) climbed from 1.12 V to 1.62 V, while the short-circuit current density (Jsc) increased from 11.56 mA/cm² to 24.03 mA/cm². Both of these changes occurred simultaneously. Along with this, the volume of the product increased from 89.0 % to 94.5 %, which resulted in a jump in the PCE from 13.05% to 25 %. These findings highlight the relevance of adjusting the thickness of the absorber layer in thin film solar cells based on CIGS in order to improve the performance of these cells and boost their ability to harvest renewable energy. The findings of this research provide important insights into the creation and improvement of solar panels in order to improve the efficiency of photovoltaic systems.