Giant tunneling magnetoresistance effect of van der Waals magnetic tunnel junction Fe3GaTe2/InSe/Fe3GaTe2

Van der Waals (vdW) magnetic tunnel junctions (MTJs), with a two-dimensional (2D) material barrier between two vdW ferromagnetic electrodes, present unprecedented opportunities to design innovative spintronic devices. In this study, we employ density functional theory and non-equilibrium Green's function methods to investigate the spin-dependent electronic transport properties of a vdW MTJ, Fe3GaTe2/InSe/Fe3GaTe2. The MTJ with a monolayer InSe barrier demonstrates nearly 100% spin filtering and a large tunneling magnetoresistance (TMR) of 7.48 × 105%, where the resistance changes nearly 10 000% as the magnetization alignment of the electrodes transitions from parallel (P) to antiparallel. When the barrier layer increases from monolayer InSe to bilayer InSe, the TMR ratio (3.64 × 107%) is significantly enhanced. The large TMR originates from the high spin polarization of the magnetic electrodes, Fe3GaTe2. Our results highlight that room-temperature vdW MTJs pave the way for potential applications of nonvolatile spintronic devices.