Single event burnout in SiC MOSFETs induced by nuclear reactions with high-energy oxygen ions

Abstract We investigate the impact of high-energy O ions on the occurrence of single-event burnout (SEB) in silicon carbide (SiC) metal–oxide–semiconductor field-effect transistors (MOSFETs) under various bias conditions. Through a combination of SRIM, GEANT4, and TCAD simulations, we explore the role of secondary ions generated by nuclear reactions between high-energy O ions and SiC materials. These secondary ions, with significantly higher linear energy transfer (LET) values, contribute to electron–hole pair generation, leading to SEB. Our results show that the energy deposition and penetration depth of these secondary ions, especially those with high LET, are sufficient to induce catastrophic SEB in SiC MOSFETs. The study also highlights the critical influence of reverse bias voltage on SEB occurrence and provides insights into the failure mechanisms induced by nuclear reactions with high-energy O ions. This work offers valuable understanding for improving the radiation resistance of SiC-based power devices used in space and high-radiation environments, contributing to the design of more reliable electronics for future space missions.