Arc‐Plasma‐Jet Irradiation for Highly Efficient and Non‐Destructive Photoresist Removal From Silicon Wafers

ABSTRACT In this study, we propose a novel pin‐ring arc plasma jet utilizing an Ar‐O 2 mixture for the removal of photoresist from semiconductor wafers. The effect of several key parameters, including oxygen mixing ratio, discharging distance, input voltage, and gas flow rate, on the cleaning performance were systematically studied. The plasma jet achieved an electron temperature of 2.86 eV, while maintaining the wafer surface temperature at 344 K, ensuring high plasma activity without causing surface ablation. Under optimal conditions, the mass loss rate reached 83.8%, corresponding to a cleaning rate of 22.6 μm/min at a power density of 4.85 W/mm². This plasma jet demonstrates significant promise for efficient cleaning in semiconductor wafers, ultimately ensuring refinement throughout the entire wafer manufacturing workflow.