热电效应
热电材料
微晶
电子迁移率
Crystal(编程语言)
功勋
热电冷却
塞贝克系数
光电子学
晶界
晶体生长
凝聚态物理
材料科学
工程物理
化学
结晶学
热力学
微观结构
物理
计算机科学
程序设计语言
作者
Yingcai Zhu,Yuan Yu,Huaide Zhang,Yongxin Qin,Ziyuan Wang,Shaoping Zhan,Dongrui Liu,Nan Lin,Yinghao Tao,Tao Hong,Siqi Wang,Zhen‐Hua Ge,Matthias Wuttig,Li‐Dong Zhao
摘要
The room-temperature thermoelectric performance of materials underpins their thermoelectric cooling ability. Carrier mobility plays a significant role in the electronic transport property of materials, especially near room temperature, which can be optimized by proper composition control and growing crystals. Here, we grow Pb-compensated AgPb18+xSbTe20 crystals using a vertical Bridgman method. A large weighted mobility of ∼410 cm2 V–1 s–1 is achieved in the AgPb18.4SbTe20 crystal, which is almost 4 times higher than that of the polycrystalline counterpart due to the elimination of grain boundaries and Ag-rich dislocations verified by atom probe tomography, highlighting the significant benefit of growing crystals for low-temperature thermoelectrics. Due to the largely promoted weighted mobility, we achieve a high power factor of ∼37.8 μW cm–1 K–2 and a large figure of merit ZT of ∼0.6 in AgPb18.4SbTe20 crystal at 303 K. We further designed a 7-pair thermoelectric module using this n-type crystal and a commercial p-type (Bi, Sb)2Te3-based material. As a result, a high cooling temperature difference (ΔT) of ∼42.7 K and a power generation efficiency of ∼3.7% are achieved, revealing promising thermoelectric applications for PbTe-based materials near room temperature.
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