Conductivity-enhanced thick hole-transporting layers via doping–crosslink synergy for efficient and stable NIR QLEDs

lifetime of 262 min using TAPC-doped CBP-V HTLs, far surpassing devices with either thin or undoped HTLs. Moreover, the doped thick HTL effectively compensates for substrate roughness and enables uniform emission in large-area blade-coated devices, offering a scalable and reliable route toward high-performance near-infrared QLEDs.