Detrapping of the carriers from shallow states in a highly responsive, fast, broadband (UV-vis-NIR), self-powered SnSe/Si photodetector with asymmetric metal electrodes

Bias-dependent trapping and de-trapping can be seen in the SnSe device. At low bias, voltage trapping of the carriers can be seen in the device; they start to de-trap after 500 mV bias.