Improved Silicon Surface Passivation by ALD Al2O3/SiO2 Multilayers with In‐Situ Plasma Treatments

Abstract Al 2 O 3 is one of the most effective dielectric surface passivation layers for silicon solar cells, but recent studies indicate that there is still room for improvement. Instead of a single layer, multilayers of only a few nanometers thickness offer the possibility to tailor material properties on a nanometer scale. In this study, the effect of various plasma treatments performed at different stages during the ALD deposition of Al 2 O 3 /SiO 2 multilayers on the silicon surface passivation quality is evaluated. Significant improvements in surface passivation quality for some plasma treatments are observed, particularly for single Al 2 O 3 /SiO 2 bilayers treated with a H 2 plasma after SiO 2 deposition. This treatment resulted in a surface recombination parameter J 0 as low as 0.35 fA cm − 2 on (100) surfaces of 10 Ω cm n ‐type silicon, more than a factor of 5 lower than that of Al 2 O 3 single layers without plasma treatment. Capacitance‐voltage measurements indicate that the improved surface passivation of the plasma‐treated samples results from an enhanced chemical interface passivation rather than an improved field effect. In addition, a superior temperature stability of the surface passivation quality is found for various plasma‐treated multilayers.