Study of Gallium Interaction with Metal-oxide Surfaces

In the present work, X-ray Photoelectron Spectroscopy (XPS) was used to study interaction of gallium deposited on different metal-oxide surfaces. Materials such as CeOx/Si, Si, γ-Al2O3, Al2O3/Al and Al foil and were used as substrates. Ga was deposited onto these substrates in number of steps up to a thickness of several nanometres. Prepared samples were further studied under different temperature conditions. Gallium oxidation state was determined by Auger parameter analysis. Interaction of gallium with highly oxidized substrates led to gallium oxidation. In general, interaction of gallium with surface was strongly influenced by oxidation state of particular substrate. In addition, intense interaction between gallium and CeOx support occurred.