Intermediate Resistive State in Wafer‐Scale Vertical MoS 2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

ABSTRACT Memristors based on 2D materials have garnered significant attention. Their fast resistive switching (RS) behavior and atomic‐level thickness enable low power consumption, making them promising candidates for neuromorphic computing. Among these, memristors based on molybdenum disulfide (MoS 2 ) have been extensively studied. Their RS has been attributed to the formation and rupture of conductive filaments (CFs). However, the underlying mechanism of filament formation remains underexplored, and the inherently stochastic nature of RS leads to high variability and limited reproducibility. In this study, we demonstrate wafer‐scale memristors based on metal–organic chemical vapor‐deposited MoS 2 . Our devices exhibit both volatile and nonvolatile RS behaviors, tunable by modulating the current compliance. Notably, we observe stable RS characteristics in an intermediate resistive state (IRS), set and reset voltages within ±1 V, endurance of over 2500 cycles, and state retention over 10 6 s. Among 100 tested devices, 98 exhibited IRS behavior, confirming a high yield (98%) and demonstrating its robust and reproducible RS nature. Combined experimental and simulation results further indicate that the IRS arises from the lateral growth of CFs in the van der Waals gaps. Furthermore, the devices successfully emulate synaptic plasticity with current responses on a microsecond timescale, highlighting their potential for large‐scale integration in neuromorphic computing architectures.