极紫外光刻
扫描仪
平版印刷术
计算机科学
光学
数值孔径
极端紫外线
物理
激光器
波长
作者
Bartosz Bilski,J. Zimmermann,Matthias Roesch,J. A. Liddle,Eelco van Setten,Gerardo Bottiglieri,Jan van Schoot
摘要
The continuation of Moore’s law demands the continuous development of EUV lithography. After the NXE:3400B scanner, currently being inserted in high-volume manufacturing (HVM), the next logical step is to increase the numerical aperture (NA) of the EUV projection optics, from 0.33 to 0.55, resulting in a high-NA EUV scanner. Looking back at the history of lithography tools developed in the last decades, we can see that such an increase of NA is, in relative terms, unprecedented (0.55 = 0.33 + 67%). This significant step forward in the NA is a challenge on many fronts and requires many adaptations. In this paper you will find an overview of the key concepts that make high-NA lithography different on imaging end, how the imaging assures the continued life of Moore’s law for the years to come and what are potential mask-related developments that would contribute to high-NA’s success.
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