Sub-Linear Current Voltage Characteristics of Schottky-Barrier Field-Effect Transistors

This article studies the sub-linearity of the output characteristics measured in Schottky-barrier metal-oxide-semiconductor field-effect transistors with simulations and experiments. It is shown that the sub-linearity is not due to the forward-biased Schottky diode at the drain contact interface but due to the drain bias impact on the source-side Schottky-barrier, resulting in an increased carrier injection with increasing drain–source voltage. The simulation results are confirmed with the measurements of fabricated dual-gate Schottky-barrier transistors.