Near-Infrared photodetectors based on 2D Bi2S3

Herein, we report for the first time, the chemical vapor deposition of 2D bismuth sulfide (Bi2S3). The 2D Bi2S3-based field-effect transistor showed an n-type electron mobility of 12.5 cm-2V-1s−1 with an on/off ratio of 10. Under 785 nm illumination, the 2D Bi2S3-based photodetector exhibited a photo responsivity of 16 AW−1, an external quantum efficiency of 2500%, a detectivity in the order of 1010 Jones and a linear dynamic range of 35 dB with a fast response time of 100 ms. Our results suggest that Bi2S3 could be a promising new 2D material for the next-generation electronic and optoelectronic devices.