Low forward voltage of 1.2kV-20A 4H-SiC JBS rectifiers: the impact of thinning process

This paper reports characteristics of 1.2kV/20A 4H-SiC Junction Barrier controlled Schottky (JBS) rectifiers manufactured in a 6-inch SiC power device laboratory of State Grid. The backside thinning and laser annealing processes are used in the SiC JBS rectifiers, which adopts a shallow trench structure. Compared with the traditional process, the forward on state voltage drop (@20A) of this diode with thinning and laser annealing processes is reduced from 1.71V to 1.38V at 25 ℃ (Chip area is 3mm*3mm). After using the package of TO247-2L, the voltage drop is reduced from 2.8V to 2.4V at temperature up to 175℃. The leakage current remained below 50μA @1.2kV even up to 175℃.