薄脆饼
磨料
材料科学
硅
钻石
机械工程
光电子学
冶金
工程类
作者
Changyong Chen,Meng Sun,Xiaoqing Chen,Yi Wang,Zhong-Zhong Jiang,Jianan Zhou
出处
期刊:Metallurgical Research & Technology
[EDP Sciences]
日期:2021-01-01
卷期号:118 (6): 616-616
标识
DOI:10.1051/metal/2021091
摘要
Using ultra-fine wire saw to cut solar grade silicon wafer is a very precise technology. In the past 20 years, researchers have done a lot of research and made great progress. The cutting method of silicon rod has developed from single line cutting to multi line simultaneous cutting, which greatly improves the production efficiency and the yield of silicon rod. However, the problems of high cutting loss, low cutting efficiency, and large surface damage of silicon wafer need to be solved; The surface of wire saw line has developed from smooth surface to coated diamond abrasive, which greatly improves the service life of wire saw line; The method of coated diamond abrasive on the surface of wire saw line has developed from resin consolidation to electroplating consolidation, which greatly improves the service life of wire saw line it improves the firmness of the coating; The arrangement of wire saw wire has developed from single wire to multi wire stranding, which makes the wire saw wire can cut large-size silicon rod; The minimum thickness of silicon wafer that can be cut is about 100–140 µm according to the perspective of stress analysis, while the excetive value should be located by more research.
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