光子上转换
光致发光
材料科学
光电子学
激发
光致发光激发
吸收(声学)
发光
物理
量子力学
复合材料
作者
Xinbo Wang,Qi Zhang,Xiaoxu Zhao,Xin Luo,Calvin Pei Yu Wong,Junyong Wang,Dongyang Wan,T. Venkatesan,Stephen J. Pennycook,Kian Ping Loh,Goki Eda,Andrew Thye Shen Wee
出处
期刊:Nano Letters
[American Chemical Society]
日期:2018-09-27
卷期号:18 (11): 6898-6905
被引量:78
标识
DOI:10.1021/acs.nanolett.8b02804
摘要
Hexagonal boron nitride (h-BN) was recently reported to display single photon emission from ultraviolet to near-infrared range due to the existence of defects. Single photon emission has potential applications in quantum information processing and optoelectronics. These findings trigger increasing research interests in h-BN defects, such as revealing the nature of the defects. Here, we report another intriguing defect property in h-BN, namely photoluminescence (PL) upconversion (anti-Stokes process). The energy gain by the PL upconversion is about 162 meV. The anomalous PL upconversion is attributed to optical phonon absorption in the one-photon excitation process, based on excitation power, excitation wavelength, and temperature-dependence investigations. Possible constitutions of the defects are discussed from the results of scanning transmission electron microscopy (STEM) studies and theoretical calculations. These findings show that defects in h-BN exhibit strong defect-phonon coupling. The results from STEM and theoretical calculations are beneficial for understanding the constitution of the h-BN defects.
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