Achieving high uniformity and yield for micro LED applications with precisely strain-engineered large-diameter epiwafers

One of the big challenges of micro LED displays is to reduce cost/increase yield and establish excellent manufacturability. Galliumnitride on silicon (GaN-on-Si) LED epiwafers offer fundamental cost advantages to the entire process flow for micro LEDs compared with conventional GaN-on-sapphire LED epiwafers. However, due to the difficulties of epitaxial growth of GaN-on-Si, demonstration of such cost advantages in micro LED application is not wide-spread yet. In this presentation, we have demonstrated excellent emission uniformity with well-controlled strain by precise strain-engineering. This opens the way to use the advantages of GaN-on-Si LED epiwafers in the entire supply chain of micro LED making and thus reduce cost significantly and enable high yield manufacturing.