Fabrication of electrodes for a logic element based on a disordered dopant atoms network

Two laboratory methods of gold nanoelectrodes fabrication on the top of a silicon substrate were developed in this work. Both uses an electron-beam lithography. First one is based on a positive tone resist, a cold development and a lift-off technique. Second one is based on a negative tone resist and an ion etching. Methods comparison took into account the following results: obtained resolution, edge roughness and conductance between electrodes. As a result we conclude that only electrodes created by the lift-off technique are suitable for creation of a logic element based on a disordered dopant atoms network. The reason is a high conductance of a silicon after the ion etching.