Research progress of formation mechanisms of electrochemically prepared Ta_2O_5 thin films

Research on formation mechanisms of electrochemical Ta2O5 thin films is reviewed.The emphasis is on the mechanism of leakage current in response to light for electrochemical Ta2O5 thin films.The influence factors for the formation of Ta2O5thin films,including oxygen content,impurities and crystallization are described.The mechanisms of leakage current,such as the Fowler-Nordheim(F-N) conductive mechanism,space charge limited current(SCLC),Pool-Frenkel(PF) emission and Schottky(S) emission are outlined.The theory and technology for decreasing leakage current Ta2O5 thin films are prospected.New technology applications,including Ta2O5thin film heat treatment,high polymer enhanced plastic and composite thin film are expected.